參數(shù)資料
型號(hào)： MTB50N06VL
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D2PAK-3
文件頁數(shù)： 9/12頁
文件大小： 100K
代理商： MTB50N06VL
MTB50N06VL
http://onsemi.com
6
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
Figure 15. D2PAK Power Derating Curve
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
t, TIME (s)
1.00
0.10
0.01
0.2
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.02
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN-T
O-SOURCE
0.1
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
ID = 42 A
1
150
10
100
1000
1
0
150
100
50
dc
100 s
1 ms
10 ms
10 s
200
250
300
175
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
P D
,POWER
DISSIP
ATION
(W
ATTS)
RθJA = 50°C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈ 450 mils x 350 mils
175
相關(guān)PDF資料
PDF描述
MTB50P03HDLT4 50 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET
MTB52N06VLT4 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB52N06VL 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB52N06VLT4G 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB52N06VT4 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTB50N06VLT4 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R
MTB50N06VT4 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R
MTB50P03HDL 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTB50P03HDLG 功能描述:MOSFET PFET 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTB50P03HDLT4 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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