- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98045 > MTB20N20ET4 (ON SEMICONDUCTOR) 20 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MTB20N20ET4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 248K |
| 代理商： | MTB20N20ET4 |
MTB20N20E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
200
263
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
7.0
4.0
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 10 Adc)
RDS(on)
0.12
0.16
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
3.84
3.36
Vdc
Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc)
gFS
8.0
11
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
1880
2700
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
378
535
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
68
100
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
td(on)
17
40
ns
Rise Time
(VDD = 100 Vdc, ID = 20 Adc,
VGS =10Vdc
tr
86
180
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
50
100
Fall Time
RG
9.1
)
tf
60
120
Gate Charge
(See Figure 8)
QT
54
75
nC
(VDS = 160 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
Q1
12
VGS = 10 Vdc)
Q2
24
Q3
22
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1.)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
1.0
0.82
1.35
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
239
ns
(See Figure 14)
(IS = 20 Adc, VGS = 0 Vdc,
ta
136
(IS
20 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s)
tb
103
Reverse Recovery Stored Charge
QRR
2.09
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTB3N120E | 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB40N10E | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB40N10ET4 | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB50N06VLT4 | 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB50N06VL | 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB20SA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB20SAM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB20SAV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB20SAVM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB20SB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。