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參數(shù)資料
| 型號： | MTB16N25E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-02, D2PAK-3 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 274K |
| 代理商： | MTB16N25E |
MTB16N25E
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
02
46
8
1
16
24
32
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
100°C
8
5 V
6 V
7 V
VGS = 10 V
234
56
7
0
16
24
32
8
0
25°C
8 V
7
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
5
10
15
20
25
0
0.1
0.2
0.4
0.6
ID, DRAIN CURRENT (AMPS)
TJ = 100°C
25°C
55°C
TJ = 25°C
VGS = 10 V
0.5
0.3
35
0.1
0.14
0.22
0.26
0
8
16
24
32
15 V
VGS = 10 V
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
50
0
0.5
1.0
1.5
2.0
0
100
200
1
10
100
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
VGS = 0 V
50
150
250
TJ = 125°C
25°C
100°C
VGS = 10 V
ID = 8 A
2.5
1000
35
30
0.18
3.0
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB16N25ET4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) D2PAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB16P04J3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-Channel Enhancement Mode Power MOSFET |
| MTB1-6PAL61 | 制造商:ITT Interconnect Solutions 功能描述:MTB1-6PAL61 - Bulk |
| MTB1-6PAL79 | 制造商:ITT Interconnect Solutions 功能描述: 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 6 POS 1.27mm Solder RA Thru-Hole |
| MTB1-6PAL80 | 制造商:ITT Interconnect Solutions 功能描述: 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 6 POS 1.27mm Solder RA Thru-Hole |
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