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參數(shù)資料
| 型號(hào)： | MTB20N20E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 248K |
| 代理商： | MTB20N20E |
Semiconductor Components Industries, LLC, 2000
September, 2004 Rev. XXX
1
Publication Order Number:
MTB20N20E/D
MTB20N20E
Preferred Device
Power MOSFET
20 Amps, 200 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
200
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
200
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100
°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
20
12
60
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TA = 25°C,
when mounted with the minimum
recommended pad size
PD
125
1.0
2.5
Watts
W/
°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 20 Apk, L = 3.0 mH, RG = 25 )
EAS
600
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient, when mounted
with the minimum recommended pad size
RθJC
RθJA
1.0
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
20 AMPERES
200 VOLTS
RDS(on) = 160 m
Device
Package
Shipping
ORDERING INFORMATION
MTB20N20E
D2PAK
50 Units/Rail
D2PAK
CASE 418B
STYLE 2
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
1
Gate
4
Drain
2
Drain
3
Source
T20N20E
YWW
T20N20E
= Device Code
Y
= Year
WW
= Work Week
MTB20N20ET4
D2PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
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