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參數(shù)資料
| 型號： | MT28F160S3 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲器) |
| 中文描述： | 2梅格× 8 /檢測起× 16智能3閃光（2 M中的x 8月1日M中的x 16閃速存儲器） |
| 文件頁數(shù)： | 30/39頁 |
| 文件大?。?/td> | 281K |
| 代理商： | MT28F160S3 |
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30
2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
DC ELECTRICAL CHARACTERISTICS
Commercial Temperature (0oC
≤
T
A
≤
+70oC) and Extended Temperature (-40oC
≤
T
A
≤
+85oC)
PA RA METER/CONDITION
READ CURRENT: TTL INPUT LEVELS
V
CC
= V
CC
1/2
(MAX)
CEx# = V
IL
; f = 5 MHz; I
OUT
= 0mA
READ CURRENT: CMOS INPUT LEVELS
V
CC
= V
CC
1/2
(MAX)
CEx# = GND; f = 5 MHz; I
OUT
= 0mA
STANDBY CURRENT: TTL INPUT LEVELS
V
CC
= V
CC
1/2
(MAX)
CEx# = RP# = V
IH
STANDBY CURRENT: CMOS INPUT LEVELS
V
CC
= V
CC
1/2
(MAX)
CEx# = RP# = V
CC
±0.2V
DEEP POWER-DOWN CURRENT: V
CC
SUPPLY
RP# = GND ±0.2V; OUT (RY/BY#) = 0mA
STANDBY READ CURRENT: V
PP
SUPPLY
DEEP POWER-DOWN CURRENT: V
PP
SUPPLY
RP# = GND ±0.2V
V
PP
Lockout Voltage
V
PP
Voltage
V
PP
Voltage
V
PP
Voltage
V
CC
Lockout Voltage
SY MBOL
TY P
MA X
UNITS NOTES
I
CC
1
30
mA
I
CC
2
25
mA
1, 3, 4
I
CC
3
1
4
mA
I
CC
4
20
100
μA
1, 2, 3
I
CC
5
1
15
μA
1
I
PP
1
I
PP
2
±2
0.1
±15
5
μA
μA
1
1
V
PPLK
V
PPH
1
V
PPH
2
V
PPH
3
V
CCLK
1.5
3.6
3.6
5.5
V
V
V
V
V
5, 6
6, 7
6, 7
6, 7
8
2.7
3.0
4.5
2.0
NOTE:
1. All currents are in RMS unless otherwise noted. Typical values at nominal V
CC
voltage and T
A
= +25oC. These currents
are valid for all product versions (packages and speeds).
2. Includes STS in RY/BY# level mode.
3. CMOS inputs are either V
CC
± 0.2V or GND ± 0.2V. TTL inputs are either V
IL
or V
IH
.
4. Automatic power savings (APS) reduces typical I
CCR
to 3mA at 2.7V and 3.3V V
CC
static operation.
5. Sampled, not 100% tested.
6. Refer to READ Operations timing diagram.
7. Refer to AC Characteristics – READ-Only Operations. If V
CC
is in the range of 2.7V to 3.6V (V
CC
1
), then V
PP
must be in
the range of 2.7V to 3.6V (V
PPH
1
) or 4.5V to 5.5V (V
PPH
3
). If V
CC
is in the range of 3.0V to 3.6V (V
CC
2
), then V
PP
must be
in the range of 3.0V to 3.6V (V
PPH
2
) or 4.5V to 5.5V (V
PPH
3
).
8. With
V
CC
≤
V
LKO
, flash memory WRITEs are inhibited.
CAPACITANCE
T
A
= +25oC, f = 1 MHz
PA RA METER
Input Capacitance: V
IN
= 0.0V
Output Capacitance: V
OUT
= 0.0V
SY MBOL
C
IN
C
IO
TY P
6
8
MA X
8
12
UNITS NOTES
pF
pF
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