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2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
NC
CE1#
NC
A20
A19
A18
A17
A16
V
CC
A15
A14
A13
A12
CE0#
V
PP
RP#
A11
A10
A9
A8
V
SS
A7
A6
A5
A4
A3
A2
A1
WP#
WE#
OE#
STS
DQ15
DQ7
DQ14
DQ6
V
SS
DQ13
DQ5
DQ12
DQ4
V
CC
V
SS
DQ11
DQ3
DQ10
DQ2
V
CC
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
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32
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FLASH MEMORY
GENERAL DESCRIPTION
The MT28F160S3 is a nonvolatile, electrically block-
erasable (flash), programmable, memory containing
16,777,216 bits organized as 2,097,152 bytes (8 bits) or
1,048,576 words (16 bits). The 16Mb device is organized
as thirty-two 64KB erase blocks and features in-system
block locking that is either lockable or unlockable,
selectively and individually.
PIN ASSIGNMENT (Top View )
56-Pin TSOP
MT28F160S3
NOTE:
The # symbol indicates signal is active LOW.
The MT28F160S3 also features a common flash
interface (CFI) that permits software algorithm for the
device. The software is device-independent and JEDEC
ID-independent, with forward and backward compat-
ibility. Additionally, the scalable command set (SCS)
allows a single, simple software driver in all host systems
to work with all SCS-compliant flash memory devices.
The SCS provides the fastest system/device data transfer
rates and minimizes the device and system-level
implementation costs.
FEATURES
x8/x16 organization
Thirty-two 64KB erase blocks
V
CC
and V
PP
voltages:
3V–3.6V V
CC
operation, 75ns (MIN) access time
2.7V–3.6V V
CC
operation, 100ns (MIN)
access time
2.7V–5V I/O capable*
2.7V–3.6V, or 5V V
PP
application programming
Enhanced data protection feature with V
PP
Flexible sector locking
Sector erase/program lockout during power
transition
Industry-standard pinout
Inputs and outputs that are fully TTL-compatible
Common flash interface (CFI) and scalable
command set (SCS)
Deep power-down: I
CC
= 15μA
Automatic write and erase algorithm
2.7μs per byte effective programming time using
write buffer
Automatic suspend options:
BLOCK ERASE SUSPEND-to-READ
BLOCK ERASE SUSPEND-to-PROGRAM
PROGRAM SUSPEND-to-READ
OPTIONS
Timing
75ns access
100ns access
MARKING
-75
-10
Package
Plastic 56-pin TSOP Type 1
RG
*5V I/O is a manufacturing option. Contact factory for
availability.
Part Number Example:
MT28F160S3RG-10