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參數(shù)資料
| 型號： | MRF9002R2 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, CASE 978-03, PFP-16 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 389K |
| 代理商： | MRF9002R2 |
MRF9002R2
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
15
35
0
17
Gps
Pout
VDS = 26 Vdc
IDQ = 25 mA
f = 960 MHz
SingleTone
G
ps
,POWER
GAIN
(dB)
33
19.25
31
19
29
18.75
27
18.5
25
18.25
23
18
21
17.75
19
17.5
17
17.25
19.5
2
4
6
8
10
12
14
985
25
41
925
10 dBm
VDS = 26 Vdc
IDQ = 25 mA
SingleTone
P
out
,OUTPUT
POWER
(dBm)
39
37
35
33
31
29
27
975
965
955
945
935
15 dBm
Pin = 20 dBm
Pin, INPUT POWER (dBm)
Figure 4. Output Power and Power Gain
versus Input Power
P
out
,OUTPUT
POWER
(dBm)
Pout, OUTPUT POWER (dBm)
Figure 5. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
30
19.9
20.3
22
32
28
Gps
IMD
Pout = 2 W (PEP)
IDQ = 25 mA
f1 = 960.0 MHz, f2 = 960.1 MHz
VDS, DRAIN SOURCE SUPPLY (VOLTS)
Figure 6. Power Gain and Intermodulation Distortion
versus Supply Voltage
G
ps
,POWER
GAIN
(dB)
20.2
29
20.1
30
20
31
29
28
27
26
25
24
23
INTERMODULA
TION
DISTORTION
(dBc)
IMD,
40
65
20
5
25 mA
VDS = 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
Pout, OUTPUT POWER (dBm) PEP
Figure 7. Intermodulation Distortion versus
Output Power
INTERMODULA
TION
DISTORTION
(dBc)
IMD,
50 mA
75 mA
100 mA
25
30
35
40
45
50
55
60
35
30
25
20
15
10
40
70
0
10
3rd Order
VDS = 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
Pout, OUTPUT POWER (dBm)
Figure 8. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION
DISTORTION
(dBc)
IMD,
10
20
30
40
50
60
35
30
25
20
15
5th Order
7th Order
f, FREQUENCY (MHz)
Figure 9. Output Power versus Frequency
40
15
23
10
100 mA
VDS = 26 Vdc
f = 960 MHz
SingleTone
22
21
20
19
18
17
16
15
20
25
30
35
25 mA
75 mA
50 mA
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