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參數(shù)資料
| 型號(hào)： | MRF9002R2 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, CASE 978-03, PFP-16 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 389K |
| 代理商： | MRF9002R2 |
2
RF Device Data
Freescale Semiconductor
MRF9002R2
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 Adc)
VGS(th)
2.4
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 25 mAdc)
VGS(Q)
3
—
5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 0.1 Adc)
VDS(on)
—
0.3
—
Vdc
Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system)
Common-Source Amplifier Power Gain @ P1dB
(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)
Gps
15
18
—
dB
Drain Efficiency @ P1dB
(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)
η
35
50
—
%
Input Return Loss @ P1dB
(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)
IRL
—
-15
-9
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)
P1dB
34
37
—
dBm
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 2 W CW, IDQ = 25 mA,
f = 960.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
Ψ
No Degradation In Output Power
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