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參數資料
| 型號： | MRF9002R2 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, CASE 978-03, PFP-16 |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 389K |
| 代理商： | MRF9002R2 |
Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable.
The PFP-16 package has had lead-free terminations from its initial release.
MRF9002R2
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor Array
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common-source amplifier applications in 26 volt
base station equipment. The device is in a PFP-16 Power Flat Pack package
which gives excellent thermal performances through a solderable backside
contact.
Typical Performance at 960 MHz, 26 Volts
Output Power — 2 Watts Per Transistor
Power Gain — 18 dB
Efficiency — 50%
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Dissipation Per Transistor @ TC = 25°C
PD
4
W
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case, Single Transistor
RθJC
12
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
240
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF9002R2
Rev. 6, 7/2005
Freescale Semiconductor
Technical Data
MRF9002R2
1000 MHz, 2 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 978-03
PLASTIC
PFP-16
Figure 1. Pin Connections
16
15
14
13
12
11
10
1
2
3
4
5
6
7
8
(Top View)
9
N.C.
GATE1
N.C.
GATE2
N.C.
GATE3
N.C.
DRAIN 11
DRAIN 12
DRAIN 21
DRAIN 22
N.C.
DRAIN 31
DRAIN 32
N.C.
Note: Exposed backside flag is source
terminal for transistors.
16
1
Freescale Semiconductor, Inc., 2005. All rights reserved.
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