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參數(shù)資料
| 型號： | MRF8S9120NR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, OM-780-2, CASE 2021-03, 2 PIN |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 1530K |
| 代理商： | MRF8S9120NR3 |
2
RF Device Data
Freescale Semiconductor
MRF8S9120NR3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 33 W CW, 28 Vdc, IDQ = 800 mA, 960 MHz
Case Temperature 76°C, 120 W CW, 28 Vdc, IDQ = 800 mA, 960 MHz
RθJC
0.62
0.51
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =70 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 460 μAdc)
VGS(th)
1.4
2.2
2.9
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, ID = 800 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =2 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 800 mA, Pout = 33 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
19.0
19.8
22.0
dB
Drain Efficiency
ηD
33.0
34.2
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.0
6.3
—
dB
Adjacent Channel Power Ratio
ACPR
—
--37.4
--36.4
dBc
Input Return Loss
IRL
—
--20
--12
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 800 mA, Pout =33 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz
20.1
34.6
6.3
--37.2
--14
940 MHz
20.0
34.3
6.3
--37.3
--24
960 MHz
19.8
34.2
6.3
--37.4
--20
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched both on input and output.
(continued)
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