參數(shù)資料
型號(hào)： MRF8S9202NR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, PLASTIC, OM-780-2, CASE 2021-03, 2 PIN
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 647K
代理商： MRF8S9202NR3
MRF8S9202NR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Single--Carrier W--CDMA Performance: VDD =28 Volts,IDQ =
1300 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
19.0
36.3
6.3
--38.2
940 MHz
19.1
37.2
6.2
--38.0
960 MHz
18.9
37.3
6.1
--37.1
Capable of Handling 7:1 VSWR, @ 32 Vdc, 920 MHz, 290 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout). Designed for
Enhanced Ruggedness.
Typical Pout @ 1 dB Compression Point
200 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 58 W CW, 28 Vdc, IDQ = 1300 mA, 920 MHz
Case Temperature 90°C, 200 W CW, 28 Vdc, IDQ = 1300 mA, 920 MHz
RθJC
0.31
0.27
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S9202N
Rev. 0, 12/2010
Freescale Semiconductor
Technical Data
920--960 MHz, 58 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 2021--03, STYLE 1
OM--780--2
PLASTIC
MRF8S9202NR3
Freescale Semiconductor, Inc., 2010. All rights reserved.
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