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參數資料
| 型號： | MRF8S9120NR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, OM-780-2, CASE 2021-03, 2 PIN |
| 文件頁數： | 10/16頁 |
| 文件大?。?/td> | 1530K |
| 代理商： | MRF8S9120NR3 |
MRF8S9120NR3
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 800 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
120
—
W
IMD Symmetry @ 52 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
16
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
46
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout =33 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(--30°Cto+85°C)
G
—
0.016
—
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
P1dB
—
0.002
—
dB/°C
Typical Broadband Performance — 880 MHz (In Freescale 880 MHz Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 800 mA,
Pout = 33 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
865 MHz
20.8
35.0
6.2
--37.1
--12
880 MHz
20.8
35.0
6.2
--37.5
--13
895 MHz
20.6
34.8
6.2
--38.0
--13
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相關代理商/技術參數 |
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|---|---|
| MRF8S9170NR3 | 功能描述:射頻MOSFET電源晶體管 HV8 900MHz 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S9170NR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF8S9200NR3 | 功能描述:射頻MOSFET電源晶體管 HV8 900MHz 58W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S9200NR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF8S9202GNR3 | 功能描述:射頻MOSFET電源晶體管 HV8 900MHz 58W OM780-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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