參數(shù)資料
型號(hào): MRF8S8260HSR5
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
文件頁(yè)數(shù): 8/14頁(yè)
文件大?。?/td> 576K
代理商: MRF8S8260HSR5
MRF8S8260HR3 MRF8S8260HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1500 mA, 850--895 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
260 (1)
W
IMD Symmetry @ 80 W PEP, Pout where IMD Third
Order Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
9.7
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
60
MHz
Gain Flatness in 45 MHz Bandwidth @ Pout =70 W Avg.
GF
0.3
dB
Gain Variation over Temperature
(--30°Cto+85°C)
G
0.016
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C) (1)
P1dB
0.002
dB/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
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