參數(shù)資料
型號: MRF8S8260HSR5
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
文件頁數(shù): 7/14頁
文件大?。?/td> 576K
代理商: MRF8S8260HSR5
2
RF Device Data
Freescale Semiconductor
MRF8S8260HR3 MRF8S8260HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =70 Vdc, VGS =0 Vdc)
IDSS
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 1380 μAdc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, ID = 1500 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.0
3.8
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =3.0 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1500 mA, Pout = 70 W Avg., f = 895 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
19.6
21.1
22.6
dB
Drain Efficiency
ηD
35.5
37.5
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.8
6.2
dB
Adjacent Channel Power Ratio
ACPR
--36.9
--35.0
dBc
Input Return Loss
IRL
--16
--12
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1500 mA, Pout =70 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
850 MHz
21.3
36.2
6.5
--37.0
--9
875 MHz
21.4
37.4
6.3
--36.7
--13
895 MHz
21.1
37.5
6.2
--36.9
--16
1. Part internally matched both on input and output.
(continued)
相關(guān)PDF資料
PDF描述
MRF8S8260HR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S8260HSR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S9120NR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S9202NR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S9220HSR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF8S9100HR3 功能描述:射頻MOSFET電源晶體管 HV8 900MHZ 100W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S9100HR3_10 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S9100HR5 功能描述:射頻MOSFET電源晶體管 HV8 900MHZ 100W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S9100HSR3 功能描述:射頻MOSFET電源晶體管 HV8 900MHZ 100W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S9100HSR5 功能描述:射頻MOSFET電源晶體管 HV8 900MHZ 100W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray