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參數(shù)資料
| 型號： | MR0A08AYS35 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| 中文描述： | 64K的x 16位的3.3V異步磁阻隨機存取內(nèi)存 |
| 文件頁數(shù)： | 11/20頁 |
| 文件大?。?/td> | 148K |
| 代理商： | MR0A08AYS35 |
Timing Specifications
MR0A16A Advanced Information Data Sheet, Rev. 0
Freescale Semiconductor
11
Table 11. Write Cycle Timing 2 (E Controlled)
1, 2, 3, 4, 5
Parameter
Symbol
t
AVAV
t
AVEL
t
AVEH
t
AVEH
t
ELEH
t
ELWH
t
ELEH
t
ELWH
t
DVEH
t
EHDX
t
EHAX
Min
35
0
18
20
Max
—
—
—
—
Unit
ns
ns
ns
ns
Write cycle time
6
Address set-up time
Address valid to end of write (G high)
Address valid to end of write (G low)
Enable to end of write (G high)
15
—
ns
Enable to end of write (G low)
7, 8
15
—
ns
Data valid to end of write
Data hold time
Write recovery time
10
0
12
—
—
—
ns
ns
ns
NOTES:
1
A write occurs during the overlap of E low and W low.
Due to product sensitivities to noise, power supplies must be properly grounded and decoupled
and bus contention conditions must be minimized or eliminated during read and write cycles.
If G goes low at the same time or after W goes low, the output will remain in a high-impedance
state.
After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a
minimum of 2 ns.
The minimum time between E being asserted low in one cycle to E being asserted low in a
subsequent cycle is the same as the minimum cycle time allowed for the device.
All write cycle timings are referenced from the last valid address to the first transition address.
If E goes low at the same time or after W goes low, the output will remain in a high-impedance
state.
If E goes high at the same time or before W goes high, the output will remain in a high-impedance
state.
2
3
4
5
6
7
8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR0A08BCMA35 | 功能描述:NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A08BCMA35R | 功能描述:NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A08BCSO35 | 功能描述:NVRAM 3.3V 1Mb (128Kx8) MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A08BCSO35R | 功能描述:NVRAM 3.3V 1Mb (128Kx8) MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A08BCYS35 | 功能描述:NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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