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參數(shù)資料
| 型號： | MR0A08AYS35 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| 中文描述： | 64K的x 16位的3.3V異步磁阻隨機存取內(nèi)存 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大小： | 148K |
| 代理商： | MR0A08AYS35 |
Freescale Semiconductor
Data Sheet: Advance Information
Document Number: MR0A16A
Rev. 0, 6/2007
Freescale Semiconductor, Inc., 2007. All rights reserved.
This document contains information on a new product under development. Freescale
reserves the right to change or discontinue this product without notice.
Introduction
TheMR0A16Aisa1,048,576-bitmagnetoresistive
random access memory (MRAM) device
organized as 65,536 words of 16 bits. The
MR0A16A is equipped with chip enable (E), write
enable (W), and output enable (G) pins, allowing
for significant system design flexibility without bus
contention. Because the MR0A16A has separate
byte-enable controls (LB and UB), individual bytes
can be written and read.
MRAM is a nonvolatile memory technology that
protects data in the event of power loss and does
not require periodic refreshing. The MR0A16A is
the ideal memory solution for applications that
must permanently store and retrieve critical data
quickly.
The MR0A16A is available in a 400-mil, 44-lead
plastic small-outline TSOP type-II package with an
industry-standardcenterpowerandgroundSRAM
pinout.
The MR0A16A is available in Commercial (0C to
70C), Industrial (
-
40C to 85C) and Extended
(
-
40C to 105C) ambient temperature ranges.
Features
Single 3.3-V power supply
Commercial temperature range (0C to
70C), Industrial temperature range (
-
40C
to 85C) and Extended temperature range
(
-
40C to 105C)
Symmetrical
high-speed read and write with
fast access time (35 ns)
Flexible data bus control — 8 bit or 16 bit
access
Equal address and chip-enable access
times
Automatic data protection with low-voltage
inhibit circuitry to prevent writes on power
loss
All inputs and outputs are
transistor-transistor logic (TTL) compatible
Fully static operation
Full nonvolatile operation with 20 years
minimum data retention
64K x 16-Bit 3.3-V
Asynchronous
Magnetoresistive RAM
MR0A16A
44-TSOP
Case 924A-02
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MR0A16AYS35 | 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0S08AYS35 | 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0S16AYS35 | 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR1A16AYS35 | 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR1S08AYS35 | 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR0A08BCMA35 | 功能描述:NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A08BCMA35R | 功能描述:NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A08BCSO35 | 功能描述:NVRAM 3.3V 1Mb (128Kx8) MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A08BCSO35R | 功能描述:NVRAM 3.3V 1Mb (128Kx8) MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A08BCYS35 | 功能描述:NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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