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參數(shù)資料
| 型號： | MMDF3N02HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL |
| 中文描述： | 3.8 A, 20 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 134K |
| 代理商： | MMDF3N02HDR2 |
MMDF3N02HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
20
–
–
29
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
–
–
–
–
1.0
10
μ
Adc
IGSS
–
–
100
nAdc
ON CHARACTERISTICS
(Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.5
4.0
2.0
–
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
–
–
0.058
0.074
0.090
0.100
Ohms
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
2.0
3.88
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
–
455
630
pF
Output Capacitance
–
184
250
Transfer Capacitance
–
45
90
SWITCHING CHARACTERISTICS
(Note 3.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
–
11
22
ns
Rise Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS= 4 5 Vdc
VGS = 4.5 Vdc,
RG = 6.0
RG 6.0
)
–
58
116
Turn–Off Delay Time
–
17
35
Fall Time
–
20
40
Turn–On Delay Time
–
7.0
21
Rise Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 6.0
RG 6.0
)
–
32
64
Turn–Off Delay Time
–
27
54
Fall Time
–
21
42
Gate Charge
See Figure 8
–
12.5
18
nC
(VDS = 16 Vdc, ID = 3.0 Adc,
(VDS 16 Vdc, ID 3.0 Adc,
VGS = 10 Vdc)
–
1.3
–
–
2.8
–
–
2.4
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 2.)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
–
–
0.79
0.72
1.3
–
Vdc
Reverse Recovery Time
See Figure 15
trr
ta
–
23
–
ns
(IS = 3.0 Adc, VGS = 0 Vdc,
(IS 3.0 Adc, VGS 0 Vdc,
dIS/dt = 100 A/
μ
s)
–
18
–
tb
–
5.0
–
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperature.
QRR
–
0.025
–
μ
C
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| MMDF3N02HDR2G | 功能描述:MOSFET NFET SO8D 20V 3.8A 90mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| MMDF3N04HDR2 | 功能描述:MOSFET 40V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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