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參數(shù)資料
| 型號： | MMDL301T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Hot-Carrier Diodes |
| 中文描述： | SILICON, VHF-UHF BAND, MIXER DIODE |
| 封裝： | PLASTIC, CASE 477-02, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 118K |
| 代理商： | MMDL301T1 |
LESHAN RADIO COMPANY, LTD.
S2–1/3
PLASTIC SOD– 323
CASE 477
1
2
MMDL301T1
Silicon Hot–Carrier Diodes
Schottky Barrier Diode
These devices are designed primarily for high–efficiency UHF and VHF
detector applications. They are readily adaptable to many other fast switching
RF and digital applications. They are supplied in an inexpensive plastic package
for low–cost, high–volume consumer and industrial/commercial requirements.
They are available in a Surface Mount package.
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
Very Low Capacitance – 1.5 pF (Max) @ V
R
= 15 V
Low Reverse Leakage – I
R
= 13 nAdc (Typ)
Device Marking: 4T
2
ANODE
1
CATHODE
MAXIMUM RATINGS
( T
J
=125°C unless otherwise noted )
Symbol
V
R
Rating
Value
30
Unit
Volts
Reverse Voltage
THERMAL CHARACTERISTICS
Symbol
P
D
Characteristic
Max
200
Unit
mW
Total Device Dissipation FR–5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
1.57
635
mW/°C
°C/W
R
θ
JA
T
J
, T
stg
–55 to+150
°C
*FR–5 Minimum Pad
ORDERING INFORMATION
Device
MMDL301T1
Package
SOD–323
Shipping
3000 / Tape & Reel
30 VOLTS SILICON
HOT–CARRIER DETECTOR
AND SWITCHING DIODES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
μ
A)
Diode Capacitance
(V
R
= 15 V, f = 1.0MHz) Figure 1
Reverse Leakage
(V
R
= 25 V) Figure 3
Forward Voltage
(I
F
= 1.0 mAdc) Figure 4
Forward Voltage
(I
F
= 10 mAdc) Figure 4
Symbol
Min
Typ
Max
Unit
V
(BR)R
30
—
—
Volts
C
T
—
0.9
1.5
pF
I
R
—
13
200
nAdc
V
F
—
0.38
0.45
Vdc
V
F
—
0.52
0.6
Vdc
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDL301T1G | 功能描述:肖特基二極管與整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MMDL6050 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Switching Diode |
| MMDL6050T1 | 功能描述:二極管 - 通用，功率，開關(guān) 70V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMDL6050T1G | 功能描述:二極管 - 通用，功率，開關(guān) 70V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMDL707 | 制造商:LUGUANG 制造商全稱:Shenzhen Luguang Electronic Technology Co., Ltd 功能描述:Schottky Barrier Diode |
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