參數(shù)資料
型號(hào): MM908E621ACDWB/R2
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDSO54
封裝: 17.90 X 7.50 MM, 0.65 MM PITCH, PLASTIC, SOIC-54
文件頁數(shù): 4/65頁
文件大?。?/td> 1221K
代理商: MM908E621ACDWB/R2
Analog Integrated Circuit Device Data
12
Freescale Semiconductor
908E621
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
HALF-BRIDGE OUTPUTS HB1 AND HB2
Switch On Resistance
High Side, TJ = 25°C, ILOAD = 1.0A
Low Side, TJ = 25°C, ILOAD = 1.0A
RDS(ON)-HB12
750
900
m
Ω
Over-current Shutdown
High Side
Low Side
IHBOC12
1.0
1.5
A
Over-current Shutdown blanking time(18)
tOCB
–4-8
μs
Switching Frequency(18)
fPWM
––
25
kHz
Freewheeling Diode Forward Voltage
High Side, TJ = 25°C, ILOAD = 1.0A
Low Side, TJ = 25°C, ILOAD = 1.0A
VHSF
VLSF
0.9
V
Leakage Current
ILeakHB
–<0.2
10
A
Low Side Current to Voltage Ratio(19)
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 200mA)
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 500mA)
CRRATIOHB12
17.5
3.5
25.0
5.0
32.5
6.5
V/A
HALF-BRIDGE OUTPUTS HB3 AND HB4
Switch On Resistance
High Side, TJ = 25°C, ILOAD = 1.0A
Low Side, TJ = 25°C, ILOAD = 1.0A
RDS(ON)-HB34
275
325
m
Ω
Over-current Shutdown
High Side
Low Side
IHBOC34
4.8
7.2
A
Over-current Shutdown blanking time(18)
tOCB
–4-8
μs
Switching Frequency(18)
fPWM
––
25
kHz
Freewheeling Diode Forward Voltage
High Side, TJ = 25°C, ILOAD = 1.0A
Low Side, TJ = 25°C, ILOAD = 1.0A
VHSF
VLSF
0.9
V
Leakage Current
ILeakHB
–<0.2
10
A
Low Side Current to Voltage Ratio(19)
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 500mA)
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 2.0A)
CRRATIOHB34
3.5
0.7
5.0
1.0
6.5
1.3
V/A
Notes
18.
This parameter is guaranteed by process monitoring but is not production tested.
19.
This parameter is guaranteed only if correct trimming was applied
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0V VSUP 16V, -40°C TJ 125°C, unless otherwise noted. Typical values noted
reflect the approximate parameter mean at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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