- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98023 > MMBD1010LT3 (ON SEMICONDUCTOR) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB PDF資料下載
參數(shù)資料
| 型號： | MMBD1010LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/32頁 |
| 文件大小： | 297K |
| 代理商： | MMBD1010LT3 |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁
3–50
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Switching Diode
Part of the GreenLine
Portfolio of devices with energy–conserving traits.
This switching diode has the following features:
Very Low Leakage (≤ 500 pA) promotes extended battery life by decreas-
ing energy waste. Guaranteed leakage limit is for each diode in the pair
contingent upon the other diode being in a non–forward–biased condition.
Offered in four Surface Mount package types
Available in 8 mm Tape and Reel in quantities of 3,000
Applications
ESD Protection
Reverse Polarity Protection
Steering Logic
Medium–Speed Switching
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
30
Vdc
Peak Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM
(surge)
500
mA
DEVICE MARKING
MMBD1010LT1 = A5
MMBD2010T1 = DP
MMBD3010T1 = XS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-4 Board (1)
TA = 25°C
MMBD1010LT1, MMBD3010T1
MMBD2010T1
Derate above 25
°C MMBD1010LT1, MMBD3010T1
MMBD2010T1
PD
225
150
1.8
1.2
mW
mW/
°C
Thermal Resistance Junction to Ambient
MMBD1010LT1, MMBD3010T1
MMBD2010T1
R
θJA
556
833
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
3
CATHODE
ANODE
1
2
ANODE
MMBD1010LT1
MMBD2010T1
MMBD3010T1
CASE 318-08, STYLE 9
SOT-23 (TO-236AB)
Motorola Preferred Devices
1
2
3
CASE 318D-04, STYLE 3
SC–59
CASE 419-02, STYLE 5
SC–70/SOT–323
MMBD1010LT1
MMBD2010T1
1
2
3
2
1
3
MMBD3010T1
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MMBD3000T1 | 0.2 A, SILICON, SIGNAL DIODE |
| MMBD1000LT3 | 0.2 A, SILICON, SIGNAL DIODE, TO-236AB |
| MMBD3005T1 | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| MMBD352WT3 | SILICON, UHF BAND, MIXER DIODE |
| MMBF0201NLT3 | 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD1011 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Switching Diode |
| MMBD101LT1 | 功能描述:肖特基二極管與整流器 7V 225mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MMBD101LT1G | 功能描述:肖特基二極管與整流器 7V 225mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MMBD101TS | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD101W | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
發(fā)布緊急采購，3分鐘左右您將得到回復。