參數(shù)資料
型號(hào): MJE16204
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 6 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 7/12頁
文件大小: 123K
代理商: MJE16204
MJE16204
http://onsemi.com
4
V CE
,COLLECT
OR-EMITTER
VOL
TAGE
(VOL
TS)
Figure 1. Typical DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.5
2
10
20
h FE
,DC
CURRENT
GAIN
15
3
30
7
0.7
TJ = 100°C
25°C
-55°C
7
10
5
3
50
VCE = 5 V
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Typical Collector–Emitter
Saturation Voltage
0.5
3
0.2
5
10
1
0.1
7
0.3
2
0.7
0.5
3
25
0.7 1
0.1
0.2
TJ = 25°C
TJ = 100°C
IC/IB1 = 10
0.3
7
60
5
7.5
0.2
C,
CAP
ACIT
ANCE
(pF)
V BE
,BASE-EMITTER
VOL
TAGE
(VOL
TS)
V CE
,COLLECT
OR-EMITTER
VOL
TAGE
(VOL
TS)
Figure 3. Typical Collector–Emitter
Saturation Region
IB, BASE CURRENT (AMPS)
0.7
0.1
0.03
0.3
6 A
0.05
1
2
2 A 3 A
IC = 1 A
0.03
0.07 0.1
0.7
0.2
0.5
30
5
10
Figure 4. Typical Base–Emitter
Saturation Voltage
0.3
30
0.5
5
0.7
0.1
0.7
20
110
10
2
TJ = 25°C
23
5
7
IC, COLLECTOR CURRENT (AMPS)
TJ = 25°C
TJ = 100°C
0.3
Figure 5. Typical Capacitance
10K
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.1
1K
100
10
1
10
100
1K
2K
200
20
3K
300
5K
500
50
0.3
2
30
300
20
0.5
5
50
500
f T
,TRANSITION
FREQUENCY
(MHz)
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Typical Transition Frequency
VCE = 10 V
ftest = 1 MHz
TC = 25°C
0
0.5
1
1.5
2
3
2.5
20
8
2
14
0
6
16
12
0.5
0.07
0.2
0.05
20
3
7
2
1
3
IC/IB1 = 5 to 10
7
1
3
0.5
30
0.2
3
200
TC = 25°C
10
4
18
Cob
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