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參數(shù)資料
| 型號： | MJE16204 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 123K |
| 代理商： | MJE16204 |
SCANSWITCH
NPN Bipolar Power Deflection Transistor
For High and Very High Resolution
Monitors
The MJE16204 is a state–of–the–art SWITCHMODE
bipolar
power transistor. It is specifically designed for use in horizontal
deflection circuits for 20 mm diameter neck, high and very resolution,
full page, monochrome monitors.
550 Volt Collector–Base Breakdown Capability
Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
Application Specific State–of–the–Art Die Design
Isolated or Non–Isolated TO–220 Type Packages
Fast Switching:
65 ns Inductive Fall Time (Typ)
680 ns Inductive Storage Time (Typ)
Low Saturation Voltage:
0.4 Volts at 3.0 Amps Collector Current and 400 mA Base Drive
Low Collector–Emitter Leakage Current —
100
A Max at 550 Volts — VCES
High Emitter–Base Breakdown Capability For High Voltage Off Drive
Circuits — 9.0 Volts (Min)
Case 221D is UL Recognized at 3500 V
RMS: File #E69369
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 2
1
Publication Order Number:
MJE16204D
MJE16204
POWER TRANSISTORS
6.0 AMPERES
550 VOLTS — VCES
45 AND 80 WATTS
CASE 221A–09
TO–220AB
MJE16204
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| MJE170STU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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