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參數(shù)資料
| 型號： | MJE16204 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 123K |
| 代理商： | MJE16204 |
MJE16204
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (3)
Collector Cutoff Current
(VCE = 550 Vdc, VBE = 0 V)
ICES
—
—
100
Adc
Emitter–Base Leakage
(VEB = 8.0 Vdc, IC = 0)
IEBO
—
—
10
Adc
Emitter–Base Breakdown Voltage
(IE = 1.0 mA, IC = 0)
V(BR)EBO
8.0
11
—
Vdc
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
250
325
—
Vdc
ON CHARACTERISTICS (3)
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 133 mAdc)
(IC = 3.0 Adc, IB = 400 mAdc)
VCE(sat)
—
0.25
0.4
0.6
1.0
Vdc
Base–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 400 mAdc)
VBE(sat)
—
0.9
1.5
Vdc
DC Current Gain
(ICE = 6.0 Adc, VCE = 5.0 Vdc)
hFE
8.0
14
20
—
DYNAMIC CHARACTERISTICS
Dynamic Desaturation Interval (IC = 3.0 A, IB1 = 400 mA)
tds
—
50
—
ns
Output Capacitance
(VCE = 10 Vdc, IE = 0, ftest = 100 kHz)
Cob
—
90
150
pF
Gain Bandwidth Product
(VCE = 10 Vdc, IC = 1.0 A, ftest = 1.0 MHz)
fT
10
—
—
MHz
Emitter–Base Turn–Off Energy
(EB(avalanche) = 500 ns, RBE = 22 )
EB(off)
—
6.6
—
J
Collector–Heatsink Capacitance
(Mounted on a 1
″ x 2″ x 1/16″ Copper Heatsink, VCE = 0, ftest = 100
kHz)
Cc–hs
—
3.0
—
pF
SWITCHING CHARACTERISTICS
Inductive Load (Table 2) (IC = 3.0 A, IB = 400 mA)
Storage
Fall Time
tsv
tfi
—
680
65
1500
150
ns
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle v 2.0%.
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