- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385578 > MJD210 (ON SEMICONDUCTOR) Complementary Plastic Power Transistors(互補(bǔ)型功率晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | MJD210 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Complementary Plastic Power Transistors(互補(bǔ)型功率晶體管) |
| 中文描述： | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369A, DPAK-3 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大小： | 87K |
| 代理商： | MJD210 |
MJD200 (NPN) MJD210 (PNP)
http://onsemi.com
5
t, TIME (ms)
0.01
0.02
0.05
1
2
5
10
20
50
100
200
0.1
0.5
0.2
1
0.2
0.1
0.07
0.05
r
R
JC
(t) = r(t)
JC
R
JC
= 10
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
0 (SINGLE PULSE)
R
Figure 8. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.03
0.02
0.1
0.02
0.01
10
V
CE
, COLLECTOREMITTER VOLTAGE (V)
0.01
30
2
5
3
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
Figure 9. Active Region Safe Operating Area
500 s
dc
1
1ms
20
10
7
5
3
2
1
0.3
100 s
T
J
= 150
°
C
I
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on T
J(pk)
= 150
°
C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150
°
C. T
J(pk)
may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
200
V
R
, REVERSE VOLTAGE (V)
20
40
70
100
30
Figure 10. Capacitance
50
20
10
6
4
2
1
0.4
C
0.6
T
J
= 25
°
C
MJD200 (NPN)
MJD210 (PNP)
C
ob
C
ib
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD243 | Complementary Silicon Plastic Power Transistor(互補(bǔ)型硅功率晶體管) |
| MJD253 | Complementary Silicon Plastic Power Transistor(互補(bǔ)型功率晶體管) |
| MJD253T4 | Complementary Silicon Plastic Power Transistor |
| MJD31 | Complementary Power Transistors(補(bǔ)償型功率晶體管) |
| MJD31C | Complementary Power Transistors(補(bǔ)償型功率晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD210_10 | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210-1 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS |
| MJD210G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD210G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD210G-TM3-T | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。