參數(shù)資料
型號: MJD210
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Complementary Plastic Power Transistors(互補型功率晶體管)
中文描述: 5 A, 25 V, PNP, Si, POWER TRANSISTOR
封裝: PLASTIC, CASE 369A, DPAK-3
文件頁數(shù): 2/6頁
文件大?。?/td> 87K
代理商: MJD210
MJD200 (NPN) MJD210 (PNP)
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
Thermal Resistance, JunctiontoCase
R
JC
10
Thermal Resistance, JunctiontoAmbient (Note 2)
R
JA
89.3
°
C/W
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
(T
= 25
°
C unless otherwise noted)
4. f
T
=
h
fe
f
test
.
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 3), (I
= 10 mAdc, I
= 0)
Collector Cutoff Current
CB
E
V
25
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 3),
C
CE
C
CE
10
CollectorEmitter Saturation Voltage (Note 3)
(I
C
= 2 Adc, I
B
= 200 mAdc)
V
CE(sat)
Vdc
C
B
BE(sat)
C
CE
BE(on)
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
ORDERING INFORMATION
Device
Package Type
Shipping
MJD200
DPAK
75 Units / Rail
MJD200G
DPAK
(PbFree)
MJD200RL
DPAK
1800 / Tape & Reel
MJD200RLG
DPAK
(PbFree)
MJD200T4
DPAK
2500 / Tape & Reel
MJD200T4G
DPAK
(PbFree)
MJD210
DPAK
75 Units / Rail
MJD210G
DPAK
(PbFree)
MJD210RL
DPAK
1800 / Tape & Reel
MJD210RLG
DPAK
(PbFree)
MJD210T4
DPAK
2500 / Tape & Reel
MJD210T4G
DPAK
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
MJD243 Complementary Silicon Plastic Power Transistor(互補型硅功率晶體管)
MJD253 Complementary Silicon Plastic Power Transistor(互補型功率晶體管)
MJD253T4 Complementary Silicon Plastic Power Transistor
MJD31 Complementary Power Transistors(補償型功率晶體管)
MJD31C Complementary Power Transistors(補償型功率晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD210_10 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
MJD210-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS
MJD210G 功能描述:兩極晶體管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD210G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
MJD210G-TM3-T 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS