- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385578 > MJD210 (ON SEMICONDUCTOR) Complementary Plastic Power Transistors(互補(bǔ)型功率晶體管) PDF資料下載
參數(shù)資料
| 型號： | MJD210 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Plastic Power Transistors(互補(bǔ)型功率晶體管) |
| 中文描述： | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369A, DPAK-3 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 87K |
| 代理商： | MJD210 |
MJD200 (NPN) MJD210 (PNP)
http://onsemi.com
4
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
h
Figure 5. DC Current Gain
Figure 6. “On” Voltage
I
C
, COLLECTOR CURRENT (A)
200
400
0.07 0.1
0.3
5
0.05
100
80
60
40
0.2
I
C
, COLLECTOR CURRENT (A)
Figure 7. Temperature Coefficients
20
0.7
1
3
2
0.5
25
°
C
T
J
= 150
°
C
55
°
C
2
0.05
I
C
, COLLECTOR CURRENT (A)
5
1.6
1.2
0.8
0.4
0
3
2
0.07
0.2
0.1
0.5
0.3
1
0.7
T
J
= 25
°
C
V
NPN
MJD200
PNP
MJD210
V
CE
= 1 V
V
CE
= 2 V
5
0.05
3
200
400
100
80
60
40
20
h
25
°
C
T
J
= 150
°
C
55
°
C
V
CE
= 1 V
V
CE
= 2 V
V
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1 V
VC
for V
CE(sat)
VB
for V
BE
2
0.05
1.6
1.2
0.8
0.4
0
3
2
0.07
0.2
0.1
0.5
0.3
1
0.7
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1 V
V
θ
°
+2.5
+2
+1.5
+1
0
0.5
1
1.5
2
+0.5
2.5
0.07 0.1
0.3
5
0.05
0.2
0.7
1
3
2
0.5
*APPLIES FOR I
C
/I
B
≤
h
FE/3
25
°
C to 150
°
C
55
°
C to 25
°
C
25
°
C to 150
°
C
55
°
C to 25
°
C
V
θ
°
+2.5
+2
+1.5
+1
0
0.5
1
1.5
2
+0.5
2.5
0.07 0.1
0.3
5
0.05
0.2
0.7
1
3
2
0.5
5
0.07 0.1
0.3
0.2
0.7
1
2
0.5
*APPLIES FOR I
C
/I
B
≤
h
FE/3
*
VC
for V
CE(sat)
VB
for V
BE
25
°
C to 150
°
C
55
°
C to 25
°
C
25
°
C to 150
°
C
55
°
C to 25
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD243 | Complementary Silicon Plastic Power Transistor(互補(bǔ)型硅功率晶體管) |
| MJD253 | Complementary Silicon Plastic Power Transistor(互補(bǔ)型功率晶體管) |
| MJD253T4 | Complementary Silicon Plastic Power Transistor |
| MJD31 | Complementary Power Transistors(補(bǔ)償型功率晶體管) |
| MJD31C | Complementary Power Transistors(補(bǔ)償型功率晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD210_10 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS |
| MJD210G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD210G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD210G-TM3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。