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參數(shù)資料
| 型號(hào)： | MJD243 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistor(互補(bǔ)型硅功率晶體管) |
| 中文描述： | 4 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 97K |
| 代理商： | MJD243 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 9
1
Publication Order Number:
MJD243/D
MJD243 (NPN),
MJD253 (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistor
DPAK3 for Surface Mount Applications
Designed for low voltage, lowpower, highgain audio amplifier
applications.
Features
CollectorEmitter Sustaining Voltage
V
CEO(sus)
= 100 Vdc (Min) @ I
C
= 10 mAdc
High DC Current Gain
h
FE
= 40 (Min) @ I
C
= 200 mAdc
= 15 (Min) @ I
C
= 1.0 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 0.3 Vdc (Max) @ I
C
= 500 mAdc
= 0.6 Vdc (Max) @ I
C
= 1.0 Adc
High CurrentGain Bandwidth Product
f
T
= 40 MHz (Min) @ I
C
= 100 mAdc
Annular Construction for Low Leakage
I
CBO
= 100 nAdc @ Rated V
CB
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
Machine Model, C
PbFree Packages are Available
8000 V
400 V
DPAK3
CASE 369D
STYLE 1
4.0 A, 100 V, 12.5 W
POWER TRANSISTOR
MARKING DIAGRAMS
Y
WW
x
G
= Year
= Work Week
= 4 or 5
= PbFree Package
Device
Package
Shipping
ORDERING INFORMATION
DPAK3
DPAK3
CASE 369C
STYLE 1
Preferred
devices are recommended choices for future use
and best overall value.
MJD243
75 Units/Rail
MJD243T4
DPAK3
2500/Tape & Reel
MJD2531
DPAK3
75 Units/Rail
http://onsemi.com
YWW
J2x3G
MJD253T4
DPAK3
2500/Tape & Reel
12
3
4
12
3
Base
Collector
Emitter
4
MJD243T4G
2500/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MJD253T4G
DPAK3
(PbFree)
2500/Tape & Reel
MJD2531G
75 Units/Rail
MJD243G
75 Units/Rail
YWW
J2x3G
DPAK3
(PbFree)
DPAK3
(PbFree)
DPAK3
(PbFree)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD253 | Complementary Silicon Plastic Power Transistor(互補(bǔ)型功率晶體管) |
| MJD253T4 | Complementary Silicon Plastic Power Transistor |
| MJD31 | Complementary Power Transistors(補(bǔ)償型功率晶體管) |
| MJD31C | Complementary Power Transistors(補(bǔ)償型功率晶體管) |
| MJD32 | Complementary Power Transistors(互補(bǔ)型功率晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD243_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications |
| MJD243_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistor |
| MJD243-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS |
| MJD243G | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD243G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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