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參數(shù)資料
| 型號： | MJD243 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistor(互補型硅功率晶體管) |
| 中文描述： | 4 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 97K |
| 代理商： | MJD243 |
MJD243 (NPN), MJD253 (PNP)
http://onsemi.com
4
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
h
Figure 4. DC Current Gain
Figure 5. “On” Voltages
I
C
, COLLECTOR CURRENT (AMP)
200
500
0.06
0.1
0.4
4.0
0.04
100
70
50
20
0.2
5.0
1.0
2.0
0.6
25
°
C
T
J
= 150
°
C
55
°
C
I
C
, COLLECTOR CURRENT (AMP)
1.4
1.2
0.8
0.4
0
0.04 0.06
T
J
= 25
°
C
V
NPN
MJD243
PNP
MJD253
100
70
50
200
30
20
2.0
h
25
°
C
T
J
= 150
°
C
55
°
C
V
CE
= 1.0 V
V
CE
= 2.0 V
V
V
CE(sat)
V
BE
@ V
CE
= 1.0 V
0
0.04 0.06
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
I
C
/I
B
= 10
V
BE
@ V
CE
= 1.0 V
V
CE
= 1.0 V
V
CE
= 2.0 V
7.0
10
30
300
0.1
0.4
4.0
0.2
1.0
2.0
0.6
0.06
0.1
0.4
4.0
0.04
0.2
1.0
2.0
0.6
0.1
0.4
4.0
0.2
1.0
2.0
0.6
1.0
0.6
0.2
1.4
1.2
0.8
0.4
1.0
0.6
0.2
3.0
5.0
7.0
10
5.0
I
C
/I
B
= 10
V
CE(sat)
5.0
V
BE(sat)
@ I
C
/I
B
= 10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 6. Temperature Coefficients
0.04
VB
FOR V
BE
V
θ
°
1.0
1.5
2.0
2.5
25
°
C to 150
°
C
55
°
C to 25
°
C
V
θ
°
+2.5
+2.0
+1.5
+1.0
0
0.5
1.0
1.5
2.0
+0.5
2.5
*APPLIES FOR I
C
/I
B
≤
h
FE/3
25
°
C to 150
°
C
55
°
C to 25
°
C
25
°
C to 150
°
C
55
°
C to 25
°
C
0.06
0.1
0.4
4.0
0.2
1.0
2.0
0.6
0.04 0.06
0.1
0.4
4.0
0.2
1.0
2.0
0.6
VB
FOR V
BE
*
VC
FOR V
CE(sat)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD253 | Complementary Silicon Plastic Power Transistor(互補型功率晶體管) |
| MJD253T4 | Complementary Silicon Plastic Power Transistor |
| MJD31 | Complementary Power Transistors(補償型功率晶體管) |
| MJD31C | Complementary Power Transistors(補償型功率晶體管) |
| MJD32 | Complementary Power Transistors(互補型功率晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD243_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications |
| MJD243_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistor |
| MJD243-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS |
| MJD243G | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD243G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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