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Analog Integrated Circuit Device Data
Freescale Semiconductor
5
33784
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions -0.3V
≤ VBUSIN ≤ 30V, 6.0V ≤ VH_CAP ≤ 30V, -40°C ≤ TA ≤ 125°C,
RTNIN=AGND = 0V, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under
nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
Internal Quiescent Current Drain
VH_CAP = 25V, I/O = Input
IQ
–
4.0
mA
BUSIN to H_CAP Rectifier Voltage Drop
IHCAP = 15mA
IHCAP = 100mA
VRECT
–
0.75
0.9
1.00
1.4
V
H_CAP Diode Efficiency
(4)IHCAP = 400mA, BUSIN = 25V
99
–
%
BUSIN Bias Current
VBUSIN = 8.0V, VH_CAP = 9.0V
VBUSIN = 4.5V, VH_CAP = 9.0V when device is not signalling
IBIAS
-100
–
100
μA
Rectifier Leakage Current
VBUSIN = 0V, VH_CAP = 25V
IRLKG
-20
–
20
μA
REGOUT
5.8V
< VH_CAP ≤ 25V, 0 ≤ IRO ≤ 14mA
VRO
4.9
5.0
5.1
V
REGOUT Line Regulation
IRO = 14mA, 6.0V ≤ VH CAP ≤ 25V
IRO is the total internal and external load current
VRLINE
–
20
mV
REGOUT Load Regulation
0
≤ IRO ≤ 14mA, 6.0V ≤ VH CAP ≤ 25V,
VRLD
–
15
mV
REGOUT Transient Line Regulation
(5)IRO = 14mA, 0 V ≤ VBUSIN ≤ 30 V, 8V/us @ BUSIN, or, 5V/us @
HCAP
CRO = 2.2 uF, CRO ESR = 0.063-2.2Ω @ 20kHz,
0.004-0.072
Ω @ 200kHz
–
(25)
mV
REGOUT Transient Load Regulation
(5)0
≤ IRO ≤ 14mA, 6.0V ≤ VH CAP ≤ 25V, 2mA/us @ IRO,
CRO = 2.2uF, CRO ESR = 0.063-2.2Ω @ 20kHz,
0.004-0.072
Ω @ 200kHz
–
(50)
mV
REGOUT Current Limit, VREGOUT = 0V
ILMT
25
35
45
mA
Hi-side Bus Switch Resistance
0
≤ VBUSIN ≤ 30V, ISWH = 160mA (Bus Switch Active)
RSWH
–
3.0
6.0
Ω
Low-side Bus Switch Resistance
ISWL = 160mA (Bus Switch Active)
RSWL
–
3.0
6.0
Ω
Notes
4.
EFF = 400mA/IBUSIN - IQ
5.
Assured by design.