參數(shù)資料
型號: M95320-WDW6TG
廠商: NUMONYX
元件分類: PROM
英文描述: 4K X 8 FLASH 2.7V PROM, PDSO8
封裝: 0.169 INCH, ROHS COMPLIANT, TSSOP-8
文件頁數(shù): 37/45頁
文件大小: 440K
代理商: M95320-WDW6TG
Revision history
M95320, M95640, M95320-x, M95640-x
12
Revision history
Table 28.
Document revision history
Date
Revision
Changes
13-Jul-2000
1.2
Human Body Model meets JEDEC std (Table 2). Minor adjustments on pp
1,11,15. New clause on p7. Addition of TSSOP8 package on pp 1, 2,
Ordering Info, Mechanical Data
16-Mar-2001
1.3
Test condition added ILI and ILO, and specification of tDLDH and tDHDL
removed.
tCLCH, tCHCL, tDLDH and tDHDL changed to 50ns for the -V range.
“-V” Voltage range changed to “2.7V to 3.6V” throughout.
Maximum lead soldering time and temperature conditions updated.
Instruction sequence illustrations updated.
“Bus Master and Memory Devices on the SPI bus” illustration updated.
Package Mechanical data updated
19-Jul-2001
1.4
M95160 and M95080 devices removed to their own data sheet
06-Dec-2001
1.5
Endurance increased to 1M write/erase cycles
Instruction sequence illustrations updated
18-Dec-2001
2.0
Document reformatted using the new template. No parameters changed.
08-Feb-2002
2.1
Announcement made of planned upgrade to 10MHz clock for the 5V, –40
to 85°C, range.
Endurance set to 100K write/erase cycles
18-Dec-2002
2.2
10MHz, 5MHz, 2MHz clock; 5ms, 10ms Write Time; 100K, 1M erase/write
cycles distinguished on front page, and in the DC and AC Characteristics
tables
26-Mar-2003
2.3
Process indentification letter corrected in footnote to AC Characteristics
table for temp. range 3
26-Jun-2003
2.4
-S voltage range upgraded by removing it and inserting -R voltage range
in its place
15-Oct-2003
3.0
Table of contents, and Pb-free options added. VIL(min) improved to -0.45V
21-Nov-2003
3.1
VI(min) and VO(min) corrected (improved) to -0.45V
28-Jan-2004
4.0
TSSOP8 connections added to DIP and SO connections
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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