參數(shù)資料
型號(hào)： M5M4V4405CTP-6
廠商： Mitsubishi Electric Corporation
英文描述： EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
中文描述： 江戶（超頁(yè)模式）4194304位（1048576 - Word的4位）動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù)： 23/27頁(yè)
文件大?。?/td> 293K
代理商： M5M4V4405CTP-6
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CJ,TP-6,-7,-6S,-7S
MITSUBISHI LSIs
Hi-Z
Hi-Z
Hi-Z
Note 33: Early write, delayed write, read write or read modify write cycle is applicable instead of read cycle.
Timing requirements and output state are the same as that of each cycle shown above.
Hidden Refresh Cycle (Read)
(Note 33)
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
t
CRP
t
ASR
t
RAH
t
RAD
t
RCD
t
CAH
t
RCS
t
RAS
t
RC
t
CHR
t
CAC
t
AA
t
CLZ
t
RAC
t
DZO
t
RRH
t
ASR
t
RP
ADDRESS
COLUMN
ADDRESS
DATA VALID
t
RAS
t
RC
t
RP
t
RSH
ROW
t
ASC
t
RAL
t
DZC
V
IH
V
IL
t
OEA
t
ORH
t
ODD
t
OEZ
t
REZ
t
CDD
t
RCH
t
RDD
t
OHR
t
OHC
t
OFF
DQ
1
~DQ
4
(INPUTS)
RAS
W
DQ
1
~DQ
4
(OUTPUTS)
OE
A
0
~A
9
CAS
ADDRESS
ROW
相關(guān)PDF資料
PDF描述
M5M4V4405CTP-6S EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V4405CTP-6S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CTP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CTP-7S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4S40CTP-12 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
M5M4V4S40CTP-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
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