參數(shù)資料
型號： M58WR128EBZB
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 128兆位和8Mb × 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 65/87頁
文件大?。?/td> 1113K
代理商： M58WR128EBZB
68/87
Note: 1. The variable P is a pointer which is defined at CFI offset 15h.
2. Bank Regions. There are two Bank Regions, 1 contains all the banks that are made up of main blocks only, 2 contains the banks
that are made up of the parameter and main blocks.
Table 43. Bank and Erase Block Region 2 Information
(P+2F)h =68h
03h
Bank Region 1 (Erase Block Type 2): Page mode and
synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
M58WR128ET (top)
M58WR128EB (bottom)
Description
Offset
Data
Offset
Data
(P+28)h =61h
01h
(P+30)h =69h
1Fh
Number of identical banks within bank region 2
(P+29)h =62h
00h
(P+31)h =6Ah
00h
(P+2A)h =63h
11h
(P+32)h =6Bh
11h
Number of program or erase operations allowed in bank region
2:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+2B)h =64h
00h
(P+33)h =6Ch
00h
Number of program or erase operations allowed in other banks
while a bank in this region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+2C)h =65h
00h
(P+34)h =6Dh
00h
Number of program or erase operations allowed in other banks
while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+2D)h =66h
02h
(P+35)h =6Eh
01h
Types of erase block regions in region 2
n = number of erase block regions with contiguous same-size
erase blocks.
Symmetrically blocked banks have one blocking region.(2)
(P+2E)h =67h
06h
(P+36)h =6Fh
07h
Bank Region 2 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+2F)h =68h
00h
(P+37)h =70h
00h
(P+30)h =69h
00h
(P+38)h =71h
00h
(P+31)h =6Ah
01h
(P+39)h =72h
01h
(P+32)h =6Bh
64h
(P+3A)h =73h
64h
Bank Region 2 (Erase Block Type 1)
Minimum block erase cycles × 1000
(P+33)h =6Ch
00h
(P+3B)h =74h
00h
(P+34)h =6Dh
01h
(P+3C)h =75h
01h
Bank Region 2 (Erase Block Type 1): BIts per cell, internal ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
M58WR128ET (top)
M58WR128EB (bottom)
Description
Offset
Data
Offset
Data
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參數(shù)描述
M58WR128ET 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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M58WR128ET70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ET80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ETZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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