- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224150 > M58WR128EBZB (意法半導(dǎo)體) 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M58WR128EBZB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 128兆位和8Mb × 16，多銀行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 31/87頁 |
| 文件大小： | 1113K |
| 代理商： | M58WR128EBZB |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁當(dāng)前第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁
37/87
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 14. In the M58WR128E the maximum number
of Program/ Erase cycles depends on the voltage
supply used.
Table 14. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. TA = –40 to 85°C; VDD = 1.65V to 2.2V; VDDQ = 1.65V to 3.3V.
2. The difference between Preprogrammed and not preprogrammed is not significant (30ms).
3. Excludes the time needed to execute the command sequence.
4. t.b.a. = to be announced
Parameter
Condition
Min
Typ
Typical
after
100k W/E
Cycles
Max
Unit
V
PP
=
V
DD
Parameter Block (4 KWord) Erase(2)
0.3
1
2.5
s
Main Block (32 KWord) Erase
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Bank (4Mbit) Erase
Preprogrammed
3
s
Not Preprogrammed
4.5
s
Parameter Block (4 KWord) Program(3)
40
ms
Main Block (32 KWord) Program(3)
300
ms
Word Program (3)
10
100
s
Program Suspend Latency
5
10
s
Erase Suspend Latency
5
20
s
Program/Erase Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
V
PP
=
V
PP
H
Parameter Block (4 KWord) Erase
0.3
2.5
s
Main Block (32 KWord) Erase
0.9
4
s
Bank (4Mbit) Erase
3.5
s
Bank (4Mbit) Program (Quad-Enhanced Factory Program)
t.b.a.(4)
s
4Mbit Program
Quadruple Word
510
ms
Word/ Double Word/ Quadruple Word Program(3)
8
100
s
Parameter Block (4 KWord)
Program(3)
Quadruple Word
8
ms
Word
32
ms
Main Block (32 KWord) Program(3)
Quadruple Word
64
ms
Word
256
ms
Program/Erase Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5913 | COMBINED SINGLE CHIP PCM CODEC AND FILTER |
| M5913B1 | COMBINED SINGLE CHIP PCM CODEC AND FILTER |
| M5F78M05 | 5 V FIXED POSITIVE REGULATOR, PSFM3 |
| M5F78M06 | 6 V FIXED POSITIVE REGULATOR, PSFM3 |
| M5F78M08 | 8 V FIXED POSITIVE REGULATOR, PSFM3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR128ET | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ET10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ET70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ET80ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ETZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。