參數(shù)資料
型號: M58WR128EBZB
廠商: 意法半導體
英文描述: 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述: 128兆位和8Mb × 16,多銀行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 55/87頁
文件大?。?/td> 1113K
代理商: M58WR128EBZB
59/87
APPENDIX A. BLOCK ADDRESS TABLES
The following set of equations can be used to calculate a complete set of block addresses using the infor-
mation contained in Tables 28, 29, 30, 31, 32 and 33.
To calculate the Block Base Address from the Block Number:
First it is necessary to calculate the Bank Number and the Block Number Offset. This can be achieved
using the following formulas:
Bank_Number = (Block_Number
7) / 8
Block_Number_Offset = Block_Number
7 (Bank_Number x 8)
If the Bank_Number = 0, the Block Base Address can be directly read from Table 28 or Table 31 (Param-
eter Bank Block Addresses) in the Block Number Offset row. Otherwise:
Block_Base_Address = Bank_Base_Address + Block_Address_Offset
To calculate the Bank Number and the Block Number from the Block Base Address:
If the address is in the range of the Parameter Bank, the Bank Number is 0 and the Block Number can be
directly read from Table 28 or Table 31(Parameter Bank Block Addresses), in the row that corresponds to
the address given. Otherwise, the Block Number can be calculated using the formulas below:
For the top configuration (M58WR128ET):
Block_Number = ((NOT address) / 215) + 7
For the bottom configuration (M58WR128EB):
Block_Number = (address / 215) + 7
For both configurations the Bank Number and the Block Number Offset can be calculated using the fol-
lowing formulas:
Bank_Number = (Block_Number
7) / 8
Block_Number_Offset = Block_Number
7 (Bank_Number x 8)
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