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參數資料
| 型號： | M45PE10-VMN6T |
| 廠商： | 意法半導體 |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數： | 32/34頁 |
| 文件大小： | 454K |
| 代理商： | M45PE10-VMN6T |
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M45PE10
OPERATING FEATURES
Sharing the Overhead of Modifying Data
To write or program one (or more) data bytes, two
instructions are required: Write Enable (WREN),
which is one byte, and a Page Write (PW) or Page
Program (PP) sequence, which consists of four
bytes plus data. This is followed by the internal cy-
cle (of duration tPW or tPP).
To share this overhead, the Page Write (PW) or
Page Program (PP) instruction allows up to 256
bytes to be programmed (changing bits from 1 to
0) or written (changing bits to 0 or 1) at a time, pro-
vided that they lie in consecutive addresses on the
same page of memory.
An Easy Way to Modify Data
The Page Write (PW) instruction provides a con-
venient way of modifying data (up to 256 contigu-
ous bytes at a time), and simply requires the start
address, and the new data in the instruction se-
quence.
The Page Write (PW) instruction is entered by
driving Chip Select (S) Low, and then transmitting
the instruction byte, three address bytes (A23-A0)
and at least one data byte, and then driving Chip
Select (S) High. While Chip Select (S) is being
held Low, the data bytes are written to the data
buffer, starting at the address given in the third ad-
dress byte (A7-A0). When Chip Select (S) is driven
High, the Write cycle starts. The remaining, un-
changed, bytes of the data buffer are automatically
loaded with the values of the corresponding bytes
of the addressed memory page. The addressed
memory page then automatically put into an Erase
cycle. Finally, the addressed memory page is pro-
grammed with the contents of the data buffer.
All of this buffer management is handled internally,
and is transparent to the user. The user is given
the facility of being able to alter the contents of the
memory on a byte-by-byte basis.
For optimized timings, it is recommended to use
the Page Write (PW) instruction to write all con-
secutive targeted Bytes in a single sequence ver-
sus using several Page Write (PW) sequences
with each containing only a few Bytes (see Page
ation)).
A Fast Way to Modify Data
The Page Program (PP) instruction provides a fast
way of modifying data (up to 256 contiguous bytes
at a time), provided that it only involves resetting
bits to 0 that had previously been set to 1.
This might be:
–
when the designer is programming the device
for the first time
–
when the designer knows that the page has
already been erased by an earlier Page Erase
(PE) or Sector Erase (SE) instruction. This is
useful, for example, when storing a fast
stream of data, having first performed the
erase cycle when time was available
–
when the designer knows that the only
changes involve resetting bits to 0 that are still
set to 1. When this method is possible, it has
the additional advantage of minimising the
number of unnecessary erase operations, and
the extra stress incurred by each page.
For optimized timings, it is recommended to use
the Page Program (PP) instruction to program all
consecutive targeted Bytes in a single sequence
versus using several Page Program (PP) se-
quences with each containing only a few Bytes
(see Page Program (PP) and AC Characteristics
Polling During a Write, Program or Erase Cycle
A further improvement in the write, program or
erase time can be achieved by not waiting for the
worst case delay (tPW, tPP, tPE, or tSE). The Write
In Progress (WIP) bit is provided in the Status
Register so that the application program can mon-
itor its value, polling it to establish when the previ-
ous cycle is complete.
Reset
An internal Power On Reset circuit helps protect
against inadvertent data writes. Addition protec-
tion is provided by driving Reset (Reset) Low dur-
ing the Power-on process, and only driving it High
when VCC has reached the correct voltage level,
VCC(min).
Active Power, Standby Power and Deep
Power-Down Modes
When Chip Select (S) is Low, the device is select-
ed, and in the Active Power mode.
When Chip Select (S) is High, the device is dese-
lected, but could remain in the Active Power mode
until all internal cycles have completed (Program,
Erase, Write). The device then goes in to the
Standby Power mode. The device consumption
drops to ICC1.
The Deep Power-down mode is entered when the
specific instruction (the Deep Power-down (DP) in-
struction) is executed. The device consumption
drops further to ICC2. The device remains in this
mode until another specific instruction (the Re-
lease from Deep Power-down and Read Electron-
ic Signature (RES) instruction) is executed.
All other instructions are ignored while the device
is in the Deep Power-down mode. This can be
used as an extra software protection mechanism,
when the device is not in active use, to protect the
device from inadvertent Write, Program or Erase
instructions.
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| M45PE10-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6T | 4 Mbit Uniform Sector, Serial Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M45PE10-VMN6TG | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface |
| M45PE10-VMN6TP | 功能描述:閃存 SERIAL FLASH 1 Mbit Datas RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M45PE10-VMP6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface |
| M45PE10-VMP6G | 功能描述:閃存 1 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M45PE10-VMP6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface |
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