參數(shù)資料
型號(hào)： M45PE10-VMN6T
廠商： 意法半導(dǎo)體
元件分類： FLASH
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門(mén)，串行閃存
文件頁(yè)數(shù)： 30/34頁(yè)
文件大?。?/td> 454K
代理商： M45PE10-VMN6T
5/34
M45PE10
SIGNAL DESCRIPTION
Serial Data Output (Q). This output signal is
used to transfer data serially out of the device.
Data is shifted out on the falling edge of Serial
Clock (C).
Serial Data Input (D). This input signal is used to
transfer data serially into the device. It receives in-
structions, addresses, and the data to be pro-
grammed. Values are latched on the rising edge of
Serial Clock (C).
Serial Clock (C). This input signal provides the
timing of the serial interface. Instructions, address-
es, or data present at Serial Data Input (D) are
latched on the rising edge of Serial Clock (C). Data
on Serial Data Output (Q) changes after the falling
edge of Serial Clock (C).
Chip Select (S). When this input signal is High,
the device is deselected and Serial Data Output
(Q) is at high impedance. Unless an internal Read,
Program, Erase or Write cycle is in progress, the
device will be in the Standby Power mode (this is
not the Deep Power-down mode). Driving Chip
Select (S) Low selects the device, placing it in the
Active Power mode.
After Power-up, a falling edge on Chip Select (S)
is required prior to the start of any instruction.
Reset (Reset). The Reset (Reset) input provides
a hardware reset for the memory. In this mode, the
outputs are high impedance.
When Reset (Reset) is driven High, the memory is
in the normal operating mode. When Reset (Re-
set) is driven Low, the memory will enter the Reset
mode, provided that no internal operation is cur-
rently in progress. Driving Reset (Reset) Low while
an internal operation is in progress has no effect
on that internal operation (a write cycle, program
cycle, or erase cycle).
Write Protect (W). This input signal puts the de-
vice in the Hardware Protected mode, when Write
Protect (W) is connected to VSS, causing the first
256 pages of memory to become read-only by pro-
tecting them from write, program and erase oper-
ations. When Write Protect (W) is connected to
VCC, the first 256 pages of memory behave like
the other pages of memory.
相關(guān)PDF資料
PDF描述
M45PE10-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M45PE10-VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
M45PE10-VMP6 4 Mbit Uniform Sector, Serial Flash Memory
M45PE10-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M45PE10-VMP6T 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M45PE10-VMN6TG 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface
M45PE10-VMN6TP 功能描述:閃存 SERIAL FLASH 1 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M45PE10-VMP6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
M45PE10-VMP6G 功能描述:閃存 1 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M45PE10-VMP6P 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
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