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參數(shù)資料
| 型號： | M45PE10-VMN6T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 10/34頁 |
| 文件大?。?/td> | 454K |
| 代理商： | M45PE10-VMN6T |
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M45PE10
18/34
Page Erase (PE)
The Page Erase (PE) instruction sets to 1 (FFh) all
bits inside the chosen page. Before it can be ac-
cepted, a Write Enable (WREN) instruction must
previously have been executed. After the Write
Enable (WREN) instruction has been decoded,
the device sets the Write Enable Latch (WEL).
The Page Erase (PE) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, and three address bytes on Serial
Data Input (D). Any address inside the Page is a
valid address for the Page Erase (PE) instruction.
Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 15..
Chip Select (S) must be driven High after the
eighth bit of the last address byte has been latched
in, otherwise the Page Erase (PE) instruction is
not executed. As soon as Chip Select (S) is driven
High, the self-timed Page Erase cycle (whose du-
ration is tPE) is initiated. While the Page Erase cy-
cle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the
self-timed Page Erase cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is complete, the Write Enable Latch (WEL)
bit is reset.
A Page Erase (PE) instruction applied to a page
that is Hardware Protected is not executed.
Any Page Erase (PE) instruction, while an Erase,
Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in
progress.
Figure 15. Page Erase (PE) Instruction Sequence
Note: Address bits A23 to A17 are Don’t Care.
24 Bit Address
C
D
AI04046
S
2
1
3456789
29 30 31
Instruction
0
23 22
2
0
1
MSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M45PE10-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6T | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M45PE10-VMN6TG | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface |
| M45PE10-VMN6TP | 功能描述:閃存 SERIAL FLASH 1 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M45PE10-VMP6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface |
| M45PE10-VMP6G | 功能描述:閃存 1 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M45PE10-VMP6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface |
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