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參數(shù)資料
| 型號(hào)： | M45PE10-VMN6T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 20/34頁 |
| 文件大?。?/td> | 454K |
| 代理商： | M45PE10-VMN6T |
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M45PE10
Table 13. AC Characteristics (33MHz operation)
Note: 1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. When using PP and PW instructions to update consecutive Bytes, optimized timings are obtained with one sequence including all
the Bytes versus several sequences of only a few Bytes. (1
≤n ≤256)
4. Details of how to find the date of marking are given in Application Note, AN1995.
33MHz only available for products marked since week 40 of 2005(4)
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
fC
Clock Frequency for the following
instructions: FAST_READ, PW, PP,
PE, SE, DP, RDP, WREN, WRDI,
RDSR
D.C.
33
MHz
fR
Clock Frequency for READ
instructions
D.C.
20
MHz
tCH
(1)
tCLH
Clock High Time
13
ns
tCL
(1)
tCLL
Clock Low Time
13
ns
Clock Slew Rate 2 (peak to peak)
0.03
V/ns
tSLCH
tCSS
S Active Setup Time (relative to C)
10
ns
tCHSL
S Not Active Hold Time (relative to C)
10
ns
tDVCH
tDSU
Data In Setup Time
3
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
5
ns
tSHCH
S Not Active Setup Time (relative to C)
5
ns
tSHSL
tCSH
S Deselect Time
200
ns
tSHQZ
(2)
tDIS
Output Disable Time
12
ns
tCLQV
tV
Clock Low to Output Valid
12
ns
tCLQX
tHO
Output Hold Time
0
ns
tTHSL
Top Sector Lock Setup Time
50
ns
tSHTL
Top Sector Lock Hold Time
100
ns
tDP
(2)
S to Deep Power-down
3
s
tRDP
(2)
S High to Standby Power mode
30
s
tPW
(3)
Page Write Cycle Time (256 Bytes)
11
25
ms
Page Write Cycle Time (n Bytes)
10.2+
n*0.8/256
tPP
(3)
Page Program Cycle Time (256 Bytes)
1.2
5ms
Page Program Cycle Time (n Bytes)
0.4+
n*0.8/256
tPE
Page Erase Cycle Time
10
20
ms
tSE
Sector Erase Cycle Time
1
5
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M45PE10-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6T | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M45PE10-VMN6TG | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface |
| M45PE10-VMN6TP | 功能描述:閃存 SERIAL FLASH 1 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M45PE10-VMP6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface |
| M45PE10-VMP6G | 功能描述:閃存 1 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M45PE10-VMP6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface |
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