參數(shù)資料
型號(hào): M29W320DB7AN6
廠商: NUMONYX
元件分類(lèi): PROM
英文描述: 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, TSOP-48
文件頁(yè)數(shù): 4/56頁(yè)
文件大?。?/td> 1125K
代理商: M29W320DB7AN6
Signal descriptions
M29W320DT, M29W320DB
12/56
2
Signal descriptions
See Figure 1: Logic Diagram, and Table 1: Signal Names, for a brief overview of the signals
connected to this device.
2.1
Address Inputs (A0-A20)
The Address Inputs select the cells in the memory array to access during Bus Read
operations. During Bus Write operations they control the commands sent to the Command
Interface of the internal state machine.
2.2
Data Inputs/Outputs (DQ0-DQ7)
The Data I/O outputs the data stored at the selected address during a Bus Read operation.
During Bus Write operations they represent the commands sent to the Command Interface
of the internal state machine.
2.3
Data Inputs/Outputs (DQ8-DQ14)
The Data I/O outputs the data stored at the selected address during a Bus Read operation
when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high
impedance. During Bus Write operations the Command Register does not use these bits.
When reading the Status Register these bits should be ignored.
2.4
Data Input/Output or Address Input (DQ15A–1)
When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14).
When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the
LSB of the Word on the other addresses, DQ15A–1 High will select the MSB. Throughout
the text consider references to the Data Input/Output to include this pin when BYTE is High
and references to the Address Inputs to include this pin when BYTE is Low except when
stated explicitly otherwise.
2.5
Chip Enable (E)
The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to
be performed. When Chip Enable is High, VIH, all other pins are ignored.
2.6
Output Enable (G)
The Output Enable, G, controls the Bus Read operation of the memory.
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