參數(shù)資料
型號： M29W320DB7AN6
廠商： NUMONYX
元件分類： PROM
英文描述： 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁數(shù)： 10/56頁
文件大?。?/td> 1125K
代理商： M29W320DB7AN6
Command Interface
M29W320DT, M29W320DB
18/56
4.3
Read CFI Query command
The Read CFI Query Command is used to read data from the Common Flash Interface
(CFI) Memory Area. This command is valid when the device is in the Read Array mode, or
when the device is in Autoselected mode.
One Bus Write cycle is required to issue the Read CFI Query Command. Once the
command is issued subsequent Bus Read operations read from the Common Flash
Interface Memory Area.
The Read/Reset command must be issued to return the device to the previous mode (the
Read Array mode or Autoselected mode). A second Read/Reset command would be
needed if the device is to be put in the Read Array mode from Autoselected mode.
and Table 26 for details on the information contained in the Common Flash
Interface (CFI) memory area.
4.4
Program command
The Program command can be used to program a value to one address in the memory
array at a time. The command requires four Bus Write operations, the final write operation
latches the address and data in the internal state machine and starts the Program/Erase
Controller.
If the address falls in a protected block then the Program command is ignored, the data
remains unchanged. The Status Register is never read and no error condition is given.
During the program operation the memory will ignore all commands. It is not possible to
issue any command to abort or pause the operation. Typical program times are given in
. Bus Read operations during the program operation will output the Status Register
on the Data Inputs/Outputs. See the section on the Status Register for more details.
After the program operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs the memory will continue to output the Status
Register. A Read/Reset command must be issued to reset the error condition and return to
Read mode.
Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase
Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.
4.5
Unlock Bypass command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory. When the cycle time to the device is long (as with some
EPROM programmers) considerable time saving can be made by using these commands.
Three Bus Write operations are required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in Read mode.
The memory offers accelerated program operations through the VPP/Write Protect pin.
When the system asserts VPP on the VPP/Write Protect pin, the memory automatically
enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass
相關(guān)PDF資料
PDF描述
M30L40C-E3/4W 15 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
M31012ABMNFREQ VCXO, CLOCK, 150 MHz - 1400 MHz, CMOS OUTPUT
M31002ABPNFREQ VCXO, CLOCK, 150 MHz - 1400 MHz, PECL OUTPUT
M31002BSLNFREQ VCXO, CLOCK, 150 MHz - 1400 MHz, LVDS OUTPUT
M31022AGPNFREQ VCXO, CLOCK, 150 MHz - 1400 MHz, PECL OUTPUT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W320DB7AN6E 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 70NS 48TSOP
M29W320DB7AN6F 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M29W320DB7AN6F TR 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 70NS 48TSOP
M29W320DB7AZA3F 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M29W320DB7AZA6E 制造商:Micron Technology Inc 功能描述:32MB 2MX16 NOR FLASH PLASTIC IND TEMP BOTTOM PBF TFBGA 3.0V - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 70NS 63TFBGA
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