參數(shù)資料
型號(hào): LPC11U14FHN33/201,
廠商: NXP Semiconductors
文件頁(yè)數(shù): 25/72頁(yè)
文件大小: 0K
描述: IC MCU 32BIT 32K 33HVQFN
產(chǎn)品培訓(xùn)模塊: Code Density for LPC11xx
標(biāo)準(zhǔn)包裝: 260
系列: LPC11Uxx
核心處理器: ARM? Cortex?-M0
芯體尺寸: 32-位
速度: 50MHz
連通性: I²C,Microwire,智能卡,SPI,SSP,UART/USART,USB
外圍設(shè)備: 欠壓檢測(cè)/復(fù)位,POR,WDT
輸入/輸出數(shù): 26
程序存儲(chǔ)器容量: 32KB(32K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 6K x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 32-VQFN 裸露焊盤
包裝: 托盤
其它名稱: 568-8581
LPC11U1X
All information provided in this document is subject to legal disclaimers.
NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2.2 — 11 March 2014
31 of 72
NXP Semiconductors
LPC11U1x
32-bit ARM Cortex-M0 microcontroller
9.
Static characteristics
Table 6.
Static characteristics
Tamb = 40 C to +85 C, unless otherwise specified.
Symbol Parameter
Conditions
Min
Max
Unit
VDD
supply voltage (core
and external rail)
[2] 1.8
3.3
3.6
V
IDD
supply current
Active mode; VDD =3.3 V;
Tamb =25 C; code
while(1){}
executed from flash;
system clock = 12 MHz
-2
-mA
system clock = 50 MHz
-7
-mA
Sleep mode;
VDD = 3.3 V; Tamb =25 C;
system clock = 12 MHz
-1
-mA
Deep-sleep mode; VDD = 3.3 V;
Tamb =25 C
-
A
Power-down mode; VDD =3.3 V;
Tamb =25 C
-2
-
A
Deep power-down mode;
VDD =3.3 V; Tamb =25 C
[10] -220
-nA
Standard port pins, RESET
IIL
LOW-level input current VI = 0 V; on-chip pull-up resistor
disabled
-
0.5
10
nA
IIH
HIGH-level input
current
VI =VDD; on-chip pull-down resistor
disabled
-
0.5
10
nA
IOZ
OFF-state output
current
VO =0V; VO =VDD; on-chip
pull-up/down resistors disabled
-
0.5
10
nA
VI
input voltage
pin configured to provide a digital
function
0-
5.0
V
VO
output voltage
output active
0
-
VDD
V
VIH
HIGH-level input
voltage
0.7VDD
--V
VIL
LOW-level input voltage
-
0.3VDD
V
Vhys
hysteresis voltage
-
0.4
-
V
VOH
HIGH-level output
voltage
2.0 V
V
DD 3.6 V; IOH = 4 mA
VDD 0.4 --V
1.8 V
V
DD < 2.0 V; IOH = 3 mA
VDD 0.4 --V
VOL
LOW-level output
voltage
2.0 V
V
DD 3.6 V; IOL = 4 mA
--0.4
V
1.8 V
V
DD < 2.0 V; IOL = 3 mA
--0.4
V
IOH
HIGH-level output
current
VOH =VDD 0.4 V;
2.0 V
V
DD 3.6 V
4
--mA
1.8 V
V
DD < 2.0 V
3
--mA
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