參數(shù)資料
型號(hào): KM616V4000B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
中文描述: 256K × 16位低功耗和低電壓的CMOS靜態(tài)RAM(256K × 16位低功耗低電壓的CMOS靜態(tài)RAM)的
文件頁(yè)數(shù): 9/9頁(yè)
文件大?。?/td> 134K
代理商: KM616V4000B
KM616V4000B, KM616U4000B Family
CMOS SRAM
Revision 3.01
January 1998
9
Unit : millimeter(inch)
PACKAGE DIMENSIONS
44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R)
0
#1
0
#22
#44
#23
0.35
±
0.10
0.014
±
0.004
0.80
0.0315
M
1.20MAX.
18.41
±
0.10
0.725
±
0.004
0.741
11.76
±
0.20
0.463
±
0.008
+- 0.05
+ 0.004
- 0.002
0.15
0.006
1
0
0.10
0.004
0~8
°
0.45 ~0.75
0.018 ~ 0.030
( 0.010
(0.020
( 0.032
MAX
1.00
±
0.10
0.039
±
0.004
44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)
0
#1
0
#22
#44
#23
0.35
±
0.10
0.014
±
0.004
0.80
0.0315
M
1.20MAX.
18.41
±
0.10
0.725
±
0.004
0.741
11.76
±
0.20
0.463
±
0.008
+ 0.10
- 0.05
+ 0.004
- 0.002
0.15
0.006
1
0
0.10
0.004
0~8
°
0.45 ~0.75
0.018 ~ 0.030
( 0.010
(0.020
( 0.032
MAX
1.00
±
0.10
0.039
±
0.004
相關(guān)PDF資料
PDF描述
KM616U4000C 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616V4000C 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616U4010C 256Kx16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM62256CLTGI-10 32Kx8 bit Low Power CMOS Static RAM
KM62256CLTGI-10L 32Kx8 bit Low Power CMOS Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM616V4002BT15 制造商:SAMSUNG 功能描述:*
KM616V4002BT-15 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 256Kx16, 44 Pin, Plastic, TSOP 制造商:Seco Electronic Device 功能描述:Static RAM, 256Kx16, 44 Pin, Plastic, TSOP
KM6-19-20PN 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk
KM6-19-20PN-FO 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk
KM6-19-20PN-MK2 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk