參數(shù)資料
型號(hào)： KM616V4000B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
中文描述： 256K × 16位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的
文件頁數(shù)： 4/9頁
文件大?。?/td> 134K
代理商： KM616V4000B
KM616V4000B, KM616U4000B Family
CMOS SRAM
Revision 3.01
January 1998
4
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Commercial Product : T
A
=0 to 70
°
C, otherwise specified
Industrial Product : T
A
=-40 to 85
°
C, otherwise specified
2. Overshoot : V
CC
+3.0V in case of pulse width
≤
30ns
3. Undershoot : -3.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Product
Min
Typ
Max
Unit
Supply voltage
Vcc
KM616V4000B Family
KM616U4000B Family
3.0
2.7
3.3
3.0
3.6
3.3
V
Ground
Vss
All Family
0
0
0
V
Input high voltage
V
IH
KM616V4000B, KM616U4000B Family
2.2
-
Vcc+0.3
2)
0.6
V
Input low voltage
V
IL
KM616V4000B, KM616U4000B Family
-0.3
3)
-
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
1. Industrial product = 20
μ
A
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IL
=Vss to Vcc
-1
-
1
μ
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
IO
=Vss to Vcc
-1
-
1
μ
A
Operating power supply current
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
-
-
10
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA
CS
≤
0.2V, V
IN
≤
0.2V or V
IN
≥
Vcc-0.2V
Read
-
-
8
mA
Write
-
-
45
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
-
-
60
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.2
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH,
Other inputs=V
IL
or V
IH
-
-
0.5
mA
Standby Current(CMOS)
I
SB1
CS
≥
Vcc-0.2V, Others inputs = 0~Vcc
-
-
15
1)
μ
A
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