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參數(shù)資料
| 型號： | KM616V4000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 256K × 16位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 141K |
| 代理商： | KM616V4000C |
KM616V4000C, KM616U4000C Family
CMOS SRAM
Revision 0.11
June 1998
1
Preliminary
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No
0.0
0.1
0.11
Remark
Advance
Preliminary
History
Initial draft
Revised
- Speed bin change
Commercial : 70/85ns
→
70/85/100ns
Industrial : 85/100ns
→
70/85/100ns
- DC Characteristics change
I
CC
: 5mA at read/write
→
4mA at read
I
CC1
: 5mA
→
6mA
I
CC2
: 50mA
→
45mA
I
SB
: 0.5mA
→
0.3mA
I
SB1
: 10
μ
A
→
15
μ
A for commercial parts
Errata correction
Draft Date
January 13, 1998
June 12, 1998
August 13, 1998
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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