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參數(shù)資料
| 型號： | KM616V4000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 256K × 16位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 134K |
| 代理商： | KM616V4000B |
KM616V4000B, KM616U4000B Family
CMOS SRAM
Revision 3.01
January 1998
1
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
0.1
1.0
2.0
3.0
3.01
Remark
Advance
Preliminary
Final
Final
Final
History
Initial draft
Revise
- Die name change ; A to B
Finalize
Revise
- Operating current update and release.
I
CC
(Read/Write) = 20/40
→
10/45mA
I
CC1
(Read/Write) = 20/40
→
10/45mA
I
CC2
= 90
→
70mA
Revise
- Change datasheet format
- Erase 70ns part from KM616V4000BI, KM616U4000B and
KM616U4000BI Family
- Power dissipation improved 0.7 to 1.0W
- V
IL
(MAX) improved 0.4 to 0.6V.
- I
CC2
decreased 70 to 60mA.
- Erase 100ns from KM616V4000B commercial product
Error correction
Draft Data
June 28, 1996
September 19, 1996
December 17, 1996
February 17, 1997
January 14, 1998
August 7, 1998
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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