參數資料
型號： K9E2G08U0M-YIB00
元件分類： PROM
英文描述： 256M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
封裝： 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
文件頁數： 6/38頁
文件大?。?/td> 888K
代理商： K9E2G08U0M-YIB00
FLASH MEMORY
14
K9E2G08U0M
Preliminary
Erase Flow Chart
Start
I/O 6 = 1 ?
I/O 0 = 0 ?
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
or R/B = 1 ?
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
NAND Flash Technical Notes (Continued)
Block Replacement
* Step1. When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2. Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3. Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4. Do not further erase Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
Buffer memory of the controller.
1st
Block A
Block B
(n-1)th
nth
(page)
1
2
{
1st
(n-1)th
nth
(page)
{
an error occurs.
相關PDF資料
PDF描述
KA-59-281 TNC CONNECTOR, PLUG
KA-91-02 RF STRAIGHT ADAPTER
KA-91-16 RF TEE ADAPTER
KA-99-24 RF STRAIGHT ADAPTER
KA10R25 250 A, SILICON SURGE PROTECTOR
相關代理商/技術參數
參數描述
K9F1208B0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208B0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory
K9F1208B0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208D0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208D0A-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*