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參數(shù)資料
| 型號(hào)： | JANTXV2N5415UA |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁(yè)數(shù)： | 3/19頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | JANTXV2N5415UA |
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MIL-PRF-19500/512E
11
4.4.2.2 Group B inspection, (JAN, JANTX and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
Method
Condition
1
1039
Steady-state life: Test condition B, 340 hours, VCB = 10 - 20 V dc, power shall
be applied to the device to achieve TJ = +150°C minimum, and a minimum of PD
= 75 percent of maximum rated PT as defined in 1.3 herein. n = 45, c = 0.
2
1039
The steady-state life test of step 1 shall be extended to 1,000 hours for each die
design. Samples shall be selected from a wafer lot every twelve months of wafer
production. Group B, step 2 shall not be required more than once for any single
wafer lot. n = 45, c = 0.
3
1032
High- temperature life (non-operating), T
A = +200°C, t = 340 hours, n = 22,
c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or
from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection
lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in
accordance with group A, subgroup 2 and 4.5.2 herein; delta requirements only apply to subgroup C6.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E; (method 2036 not applicable for UA and UB devices).
C6
1026
1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150°C
minimum and a minimum of PD = 75 percent of maximum rated PT as defined in
1.3.
4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E; not applicable for UA and UB devices.
C6
Not applicable.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N5416UA | BJT |
| JANTXV2N5664 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-66 |
| JANTXV2N5665 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-66 |
| JANTXV2N5666 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-5 |
| JANTXV2N5666S | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N5416 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 300V 1A 3PIN TO-5 - Bulk |
| JANTXV2N5416S | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
| JANTXV2N5416U4 | 功能描述:TRANS PNP 300V 1A 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/485 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:1A 電壓 - 集射極擊穿（最大值）:300V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:2V @ 5mA，50mA 電流 - 集電極截止（最大值）:1mA 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:30 @ 50mA，10V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應(yīng)商器件封裝:U4 標(biāo)準(zhǔn)包裝:1 |
| JANTXV2N5416UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR UA LAW - Bulk |
| JANTXV2N5545 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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