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參數資料
| 型號： | JANTXV2N5415UA |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數： | 15/19頁 |
| 文件大?。?/td> | 103K |
| 代理商： | JANTXV2N5415UA |
MIL-PRF-19500/512E
5
Dimensions
Ltr
Inches
Millimeters
Notes
Ltr
Inches
Millimeter
Notes
Min
Max
Min
Max
Min
Max
Min
Max
A
.061
.075
1.55
1.90
3
D2
.0375 BSC
0.952 BSC
A1
.029
.041
0.74
1.04
D3
.155
3.93
B1
.022
.028
0.56
0.71
E
.215
.225
5.46
5.71
B2
.075 REF
1.91 REF
E3
.225
5.71
B3
.006
.022
0.15
0.56
5
L1
.032
.048
0.81
1.22
D
.145
.155
3.68
3.93
L2
.072
.088
1.83
2.23
D1
.045
.055
1.14
1.39
L3
.003
.007
0.08
0.18
5
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimension "A" controls the overall package thickness. When a window lid is used, dimension "A" must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on
the drawing.
5. Dimensions "B3" minimum and "L3" minimum and the appropriately castellation length define an
unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was
designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension
"B3" maximum and "L3" maximum define the maximum width and depth of the castellation at any point on
its surface. Measurement of these dimensions may be made prior to solder dipping.
FIGURE 3. Physical dimensions, surface mount (UA version).
相關PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N5416UA | BJT |
| JANTXV2N5664 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-66 |
| JANTXV2N5665 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-66 |
| JANTXV2N5666 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-5 |
| JANTXV2N5666S | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-39 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| JANTXV2N5416 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 300V 1A 3PIN TO-5 - Bulk |
| JANTXV2N5416S | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
| JANTXV2N5416U4 | 功能描述:TRANS PNP 300V 1A 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/485 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:1A 電壓 - 集射極擊穿（最大值）:300V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:2V @ 5mA，50mA 電流 - 集電極截止（最大值）:1mA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:30 @ 50mA，10V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應商器件封裝:U4 標準包裝:1 |
| JANTXV2N5416UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR UA LAW - Bulk |
| JANTXV2N5545 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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