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參數(shù)資料
| 型號(hào)： | JANTXV2N5415UA |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁(yè)數(shù)： | 13/19頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | JANTXV2N5415UA |
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MIL-PRF-19500/512E
3
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.178
.195
4.52
4.95
CH
.170
.210
4.32
5.34
HD
.209
.230
5.31
5.84
LC
.100 TP
2.54 TP
6
LD
.016
.021
0.41
0.53
7, 8
LL
.500
.750
12.70
19.05
7, 8, 12
LU
.016
.019
0.41
0.48
7, 8
L1
.050
1.27
7. 8
L2
.250
6.35
7, 8
Q
.040
1.02
5
TL
.028
.048
0.71
1.22
3, 4
TW
.036
.046
0.91
1.17
3
r
.010
0.18
10
P
.100
2.54
α
45
°TP
45
°TP
6
NOTES:
1.
Dimension are in inches.
2.
Metric equivalents are given for general information only.
3.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4.
Dimension TL measured from maximum HD.
5.
Body contour optional within zone defined by HD, CD, and Q.
6.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC. The device may be measured by direct methods.
7.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter
is uncontrolled in L1 and beyond LL minimum.
8.
All three leads.
9.
The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ANSI Y14.5M, diameters are equivalent to
θx symbology.
12. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (19.05 mm) maximum.
FIGURE 1. Physical dimensions (type 2N4029) (TO - 18).
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| JANTXV2N5416UA | BJT |
| JANTXV2N5664 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-66 |
| JANTXV2N5665 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-66 |
| JANTXV2N5666 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-5 |
| JANTXV2N5666S | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N5416 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 300V 1A 3PIN TO-5 - Bulk |
| JANTXV2N5416S | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
| JANTXV2N5416U4 | 功能描述:TRANS PNP 300V 1A 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/485 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:1A 電壓 - 集射極擊穿（最大值）:300V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:2V @ 5mA，50mA 電流 - 集電極截止（最大值）:1mA 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:30 @ 50mA，10V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無(wú)引線 供應(yīng)商器件封裝:U4 標(biāo)準(zhǔn)包裝:1 |
| JANTXV2N5416UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR UA LAW - Bulk |
| JANTXV2N5545 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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