參數(shù)資料
型號： IXTT110N10P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： N-Channel Enhancement Mode
中文描述： 110 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： TO-268, 3 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 578K
代理商： IXTT110N10P
2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 175
°
C
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
100
100
V
V
V
GSM
±
20
V
I
D25
I
D(RMS)
I
DM
T
= 25
°
C
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
110
75
250
A
A
A
I
AR
E
AR
E
AS
60
A
40
mJ
1.0
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
T
J
T
JM
T
stg
480
W
-55 ... +175
°
C
°
C
°
C
175
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-268
5.5
5.0
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
DS99132(05/04)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
100
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.5
5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 150
°
C
250
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
15
m
PolarHT
TM
Power MOSFET
IXTQ 110N10P V
DSS
IXTT 110N10P I
D25
= 100
= 110
V
A
R
DS(on)
=
15
m
Advance Technical Information
N-Channel Enhancement Mode
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-3P (IXTQ)
G
DS
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
相關(guān)PDF資料
PDF描述
IXTQ23N60Q Power MOSFETs Q-Class
IXTQ96N15P N-Channel Enhancement Mode Preliminary Data Sheet
IXTT96N15P N-Channel Enhancement Mode Preliminary Data Sheet
IXTU01N100D N-Channel, Depletion Mode High Voltage MOSFET
IXTY01N100D N-Channel, Depletion Mode High Voltage MOSFET
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